Analysis of the field effect in a metal-oxide-small-grain polysilicon structure-experimentation and modeling

Author

Lhermite, H. ; Bonnaud, Olivier ; Colin, Yves ; Rouffet, Annick Mercier

Author_Institution

Dept. Materiaux et Composants, Rennes I Univ., France

Volume

35

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

675

Lastpage

683

Abstract

An analysis of the field effect on small-grained (500-A) thin polysilicon film is carried out to predict the electrical behavior of metal-oxide-polysilicon structures, which depends on the grain size, the doping concentration of the polysilicon layer, and the trap densities at the grain boundaries. A one-dimensional model that is based on the exact numerical solution of Poisson´s equation, which takes into account all of these parameters, is developed. Good agreement between experimental and calculated C(V) curves is found

Keywords

defect electron energy states; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; grain boundaries; metal-insulator-semiconductor structures; silicon; Al-SiO₂-Si; C-V characteristics; Poisson´s equation; doping concentration; electrical behavior; field effect; grain boundaries; grain size; modeling; numerical solution; one-dimensional model; polysilicon MOS structure; small grained polycrystalline film; trap densities; Doping; Electron traps; Fabrication; Grain boundaries; Grain size; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2512

Filename

2512