Thickness Dependence of Giant Magnetoresistance in Spin Valves: Influence of Interface and Bulk Scattering

Author

Wang, Li ; Han, Guchang ; Wu, Yihong

Author_Institution

Data Storage Inst., Singapore

Volume

43

Issue

2

fYear

2007

Firstpage

506

Lastpage

509

Abstract

Using the semiclassical Boltzmann theory, we have investigated the influences of pure interface, nonpure interface, bulk, and interface plus bulk scattering on the giant magnetoresistance (GMR) dependence on layer thickness of the bottom spin valve (BSV), synthetic antiferromagnetic (SAF) spin valve, and dual spin valve (DSV). Our work shows consistency with experiment and theory and may provide some useful guidelines for electrical and structural optimizations of spin valves

Keywords

Boltzmann equation; antiferromagnetic materials; giant magnetoresistance; magnetic multilayers; magnetic storage; magnetoelectronics; spin valves; bottom spin valve; bulk scattering; dual spin valve; giant magnetoresistance; interface plus bulk scattering; layer thickness; nonpure interface scattering; pure interface scattering; semiclassical Boltzmann theory; spintronics; synthetic antiferromagnetic spin valve; Antiferromagnetic materials; Boundary conditions; Equations; Giant magnetoresistance; Guidelines; Magnetic heads; Magnetoelectronics; Memory; Scattering; Spin valves; Boltzmann equation; magnetoresistance; scattering; spin valve;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.887359

Filename

4069082