Title :
CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD
Author :
Blondeau, R. ; Razeghi, M. ; Krakowski, M. ; Vilain, G. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 μm and fabricated on material grown entirely by LP-MOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; CW operation; GaInAsP buried ridge structure laser; LP MOCVD; output power 15 mW; semiconductor laser; threshold current 40 mA; wavelength 1.5 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840577
