Title :
Hot electron spectroscopy
Author :
Hayes, J.R. ; Levi, A.F.J. ; Wiegmann, W.
Author_Institution :
Bell Communications Research, Murray Hill, USA
Abstract :
Using a modified GaAs planar doped barrier transistor, grown by MBE, we are able to determine the nonequilibrium distribution function of hot electrons arriving at the base/collector junction. Knowledge of the electron distribution allows one to determine the physical processes necessary for the understanding of hot electron transport which assumes prominence as device dimensions decrease.
Keywords :
III-V semiconductors; gallium arsenide; hot carriers; semiconductor epitaxial layers; transistors; GaAs planar doped barrier transistor; III-V semiconductor; MBE; base/collector junction; electron distribution; hot electron nonequilibrium distribution function; hot electron spectroscopy; hot electron transport;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840578
