DocumentCode
994925
Title
Hot electron spectroscopy
Author
Hayes, J.R. ; Levi, A.F.J. ; Wiegmann, W.
Author_Institution
Bell Communications Research, Murray Hill, USA
Volume
20
Issue
21
fYear
1984
Firstpage
851
Lastpage
852
Abstract
Using a modified GaAs planar doped barrier transistor, grown by MBE, we are able to determine the nonequilibrium distribution function of hot electrons arriving at the base/collector junction. Knowledge of the electron distribution allows one to determine the physical processes necessary for the understanding of hot electron transport which assumes prominence as device dimensions decrease.
Keywords
III-V semiconductors; gallium arsenide; hot carriers; semiconductor epitaxial layers; transistors; GaAs planar doped barrier transistor; III-V semiconductor; MBE; base/collector junction; electron distribution; hot electron nonequilibrium distribution function; hot electron spectroscopy; hot electron transport;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840578
Filename
4249089
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