Title :
Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)
Author :
Koch, T.L. ; Coldren, L.A. ; Bridges, T.J. ; Burkhardt, E.G. ; Corvini, P.J. ; Miller, B.I. ; Wilt, D.P.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
A new 1.55 μm InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ~4.5 GHz.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 microns; 3 dB detected bandwidths; InGaAsP buried heterostructure laser; VPE; high-frequency modulation characteristics; hydride vapour phase epitaxial regrowth technique; semiconductor laser; threshold current 15 mA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840581
