Title :
Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers
Author :
Brillouet, F. ; Riou, J. ; Trotte, M. ; Azoulay, Rina ; Dugrand, L.
Author_Institution :
Centre National d´Ã\x89tudes des Télécommunications, Laboratoire de Bagneux, Bagneux, France
Abstract :
We report on the first MOCVD/LPE buried-heterostructure lasers realised using a simple LPE burying process, leading to low thresholds and little dispersion in device characteristics.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs-GaAlAs BH lasers; LPE burying process; MOCVD/LPE; buried-heterostructure lasers; low dispersion; low thresholds; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840582
