Impedance characterization of GaAs FET switches

Author

Takasu, Hideki ; Yamashita, Eikichi

Author_Institution

Dept. of Electron. Eng., Univ. of Electro-Commun., Tokyo, Japan

Volume

40

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1422

Lastpage

1429

Abstract

Since the GaAs FET switch can be regarded as a linear small-signal device in the on and off states, a linear analysis is carried out only of the two states, but taking into account the geometry of electrodes, passivation layers, and depletion regions. The rectangular boundary division method is applied to solve Laplace´s equation for the impedance characterization of GaAs FET switches. Equivalent electrical circuits composed of capacitors and resistors are defined for the on state and off state of a FET switch. The capacitances and resistances in the equivalent circuits are estimated and compared with experimentally measured values at 10 GHz. The quality factor of the FET switch, which can be used for estimating insertion loss, is calculated by using the two equivalent series impedances of the FET switch corresponding to the two states

Keywords

III-V semiconductors; Q-factor; electric impedance; equivalent circuits; field effect transistors; gallium arsenide; semiconductor device models; semiconductor switches; solid-state microwave devices; 10 GHz; FET switches; GaAs; Laplace´s equation; SHF; depletion regions; electrode geometry; equivalent circuits; equivalent series impedances; impedance characterization; insertion loss; linear analysis; linear small-signal device; passivation layers; quality factor; rectangular boundary division method; Electrodes; FETs; Gallium arsenide; Geometry; Impedance; Laplace equations; Passivation; Resistors; Switched capacitor circuits; Switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.146323

Filename

146323