• DocumentCode
    995056
  • Title

    Interpretation of C/V characteristics for heterojunctions and high-low junctions

  • Author

    Rhoderick, E.H.

  • Author_Institution
    University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
  • Volume
    20
  • Issue
    21
  • fYear
    1984
  • Firstpage
    868
  • Lastpage
    869
  • Abstract
    Useful information about the interface can be obtained for heterojunctions or high-low junctions by simple inspection of the graphs of C¿2 against V. The distance between the intercepts of the two linear portions of the graph on the voltage axis is simply related to the doping densities and the interface charge.
  • Keywords
    capacitance; doping profiles; p-n heterojunctions; semiconductor junctions; capacitance voltage characteristics; doping densities; heterojunctions; high-low junctions; interface; interface charge;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840589
  • Filename
    4249100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995056