Title :
Effect of As4/Ga flux ratio on electrical properties of NID GaAs layers grown by MBE
Author :
Saletes, A. ; Massies, J. ; Neu, Gergely ; Contour, J.P.
Author_Institution :
Université de Nice Sophia-Antipolis/CNRS, Laboratoire de Physique du Solide et Energie Solaire, Valbonne, France
Abstract :
The effect of the As4/Ga flux ratio R on NID GaAs layers has been studied when the MBE growth chamber is used without baking after reloading the arsenic cells, in order to increase the productivity of the system. In these conditions a change from p- to n-type is observed when R is varied from 1.8 to 14. Satisfactory p-type material is obtained at R ¿ 3 (p = 2.0 × 1014 cm¿3, ¿77 K = 6200 cm2 V¿1 s¿1). The maximum n-type mobility occurs at R = 5.8. Photoluminescence spectroscopy confirms the effect of R on the incorporation of residual impurities.
Keywords :
III-V semiconductors; carrier mobility; electronic conduction in crystalline semiconductor thin films; gallium arsenide; impurities; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; As4/Ga flux ratio; GaAs MBE layers; III-V semiconductor; MBE growth chamber; electrical properties; n-type conduction; n-type mobility; nonintentional doping; p-type conduction; photoluminescence spectra; residual impurities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840592
