Title :
High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate
Author :
Suzuki, Yuya ; Nagai, Hiroto ; Noguchi, Y. ; Matsuoka, T. ; Kurumada, K.
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 microns wavelength; AR coating; InP/InGaAsP; as-cleaved facets; buried heterostructure; distributed feedback laser; high-power single longitudinal mode; laser diode; p-type InP substrate; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840598
