Title :
Semi-insulating silicon nitride (SinSiN) as a resistive field shield
Author :
Osenbach, John W. ; Knolle, William R.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
A plasma-deposited semi-insulating silicon nitride (SinSiN) developed as a resistive sea passivation is discussed. Following a brief review of its properties, its use as a resistive sea is reviewed. It is shown that SinSiN can be used to improve the breakdown voltage of a high-voltage device by some 20 to 40 V by screening all surface charges. It is also shown that SinSiN provides device immunity to surface charges, thereby improving yield and reliability
Keywords :
integrated circuit technology; passivation; plasma deposition; power integrated circuits; semiconductor technology; silicon compounds; SinSiN; breakdown voltage increase; device immunity to surface charges; high-voltage device; improving yield; properties; reliability; resistive field shield; resistive sea passivation; screening all surface charges; semiinsulating Si3N4; Conductors; Contacts; Failure analysis; Integrated circuit testing; Passivation; Plasma devices; Plasma properties; Sea surface; Silicon; Stability;
Journal_Title :
Electron Devices, IEEE Transactions on
