• DocumentCode
    995263
  • Title

    Semi-insulating silicon nitride (SinSiN) as a resistive field shield

  • Author

    Osenbach, John W. ; Knolle, William R.

  • Author_Institution
    AT&T Bell Labs., Allentown, PA, USA
  • Volume
    37
  • Issue
    6
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    1522
  • Lastpage
    1528
  • Abstract
    A plasma-deposited semi-insulating silicon nitride (SinSiN) developed as a resistive sea passivation is discussed. Following a brief review of its properties, its use as a resistive sea is reviewed. It is shown that SinSiN can be used to improve the breakdown voltage of a high-voltage device by some 20 to 40 V by screening all surface charges. It is also shown that SinSiN provides device immunity to surface charges, thereby improving yield and reliability
  • Keywords
    integrated circuit technology; passivation; plasma deposition; power integrated circuits; semiconductor technology; silicon compounds; SinSiN; breakdown voltage increase; device immunity to surface charges; high-voltage device; improving yield; properties; reliability; resistive field shield; resistive sea passivation; screening all surface charges; semiinsulating Si3N4; Conductors; Contacts; Failure analysis; Integrated circuit testing; Passivation; Plasma devices; Plasma properties; Sea surface; Silicon; Stability;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.106248
  • Filename
    106248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995263