DocumentCode :
995264
Title :
Novel GaAs monolithic multistage X-Ku band amplifier
Author :
Esfandiari, R. ; Chen, Y.K. ; Wanuga, S. ; Chye, P. ; Huang, Chao
Author_Institution :
General Electric Company, Electronics Laboratory, Syracuse, USA
Volume :
20
Issue :
21
fYear :
1984
Firstpage :
898
Lastpage :
899
Abstract :
A novel design approach to a wideband GaAs microwave monolithic amplifier is presented using the principle of feedback and active matching networks. The multistage amplifier utilises a unique biasing circuit which requires only one biasing voltage. A 6-18 GHz multistage amplifier has been demonstrated using the proposed approach. The amplifier has low input/output VSWR, a maximum of 20 dB gain and at least 15 dBm of output power.
Keywords :
III-V semiconductors; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; wideband amplifiers; 6 GHz to 18 GHz; Ku-band; X-band; active matching networks; biasing circuit; feedback; gain; input/output VSWR; multistage amplifier; output power; wideband GaAS microwave monolithic amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840610
Filename :
4249121
Link To Document :
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