• DocumentCode
    995264
  • Title

    Novel GaAs monolithic multistage X-Ku band amplifier

  • Author

    Esfandiari, R. ; Chen, Y.K. ; Wanuga, S. ; Chye, P. ; Huang, Chao

  • Author_Institution
    General Electric Company, Electronics Laboratory, Syracuse, USA
  • Volume
    20
  • Issue
    21
  • fYear
    1984
  • Firstpage
    898
  • Lastpage
    899
  • Abstract
    A novel design approach to a wideband GaAs microwave monolithic amplifier is presented using the principle of feedback and active matching networks. The multistage amplifier utilises a unique biasing circuit which requires only one biasing voltage. A 6-18 GHz multistage amplifier has been demonstrated using the proposed approach. The amplifier has low input/output VSWR, a maximum of 20 dB gain and at least 15 dBm of output power.
  • Keywords
    III-V semiconductors; microwave amplifiers; microwave integrated circuits; monolithic integrated circuits; wideband amplifiers; 6 GHz to 18 GHz; Ku-band; X-band; active matching networks; biasing circuit; feedback; gain; input/output VSWR; multistage amplifier; output power; wideband GaAS microwave monolithic amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840610
  • Filename
    4249121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995264