Title :
Two-dimensional profiles of impurity diffusion in semiconductors
Author :
Buonomo, A. ; Di Bello, C.
Author_Institution :
UniversitÃ\xa0 della Calabria, Dipartimento Elettrico, Cosenza, Italy
Abstract :
The letter shows how two-dimensional impurity profiles in semiconductors can be calculated by applying a simple and efficient finite difference algorithm. The diffusion coefficient employed in the model depends on the impurity concentrations in accordance with the recent theory of nonlinear diffusion in semiconductors. The limit of validity of the more simple linear diffusion model is also determined.
Keywords :
difference equations; diffusion in solids; doping profiles; semiconductors; diffusion coefficient; finite difference algorithm; impurity diffusion; linear diffusion model; nonlinear diffusion; semiconductors; two-dimensional impurity profiles;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840618
