Title :
Analytical expression for the high-current I/V characteristic of a distributed diode
Author :
Tortelier, P. ; Arsene-Henry, P.
Author_Institution :
Centre National d´Etudes des Telecommunications, Bagneux, France
Abstract :
In order to take into account the effect of the metallisation resistance involved in the modelling of FETs with a short and wide gate, we give an analytical treatment of the high-current I/V characteristic of a distributed Schottky diode.
Keywords :
Schottky-barrier diodes; metallisation; semiconductor device models; distributed Schottky diode; high current I-V characteristic; metallisation resistance; modelling; semiconductor device model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840619
