Title :
MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
Author :
Soga, T. ; Hattori, Saki ; Sakai, Shin´ichi ; Takeyasu, M. ; Umeno, Masayoshi
Author_Institution :
Nagoya University, Department of Electronics, Faculty of Engineering, Nagoya, Japan
Abstract :
GaAs with a mirror-like surface is grown by MOCVD on an Si substrate using an AlP, AlGaP, GaP/GaAs0.5P0.5 super-lattice and GaAs0.5P0.5/GaAs superlattice as intermediate layers. The photoluminescence intensity is found to be about 56% of that of a GaAs substrate grown under the same conditions and is one order of magnitude higher than that grown on a Ge-coated Si substrate, in spite of the early stage of the experiment.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor superlattices; semiconductor thin films; AlGaP; GaAs; GaAs0.5P0.5/GaAs superlattice; GaP/GaAs0.5P0.5 superlattice; III-V semiconductor; MOCVD growth; Si substrate; intermediate layers; photoluminescence intensity; strained superlattice layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840623
