DocumentCode
995420
Title
InGaAs/InP mesa photodetector passivated with silicon dioxide
Author
Antell, G.R. ; Murison, R.F.
Author_Institution
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume
20
Issue
22
fYear
1984
Firstpage
919
Lastpage
920
Abstract
A combination of mesa and planar techniques has enabled detectors of InGaAs on InP substrates to be masked during diffusion and later passivated by SiO2 films without degrading the dark current. Preliminary lifetests at 100°C are encouraging.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; passivation; photodetectors; III-V semiconductor; InGaAs; InGaAs/InP mesa photodetector; InP substrates; SiO2 passivation; dark current; diffusion; mask; planar techniques;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840625
Filename
4249137
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