A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology

Author

Lai, R. ; Chang, K.W. ; Wang, H. ; Tan, K. ; Lo, D.C. ; Streit, D.C. ; Liu, P.H. ; Dia, R. ; Berenz, J.

Author_Institution

Adv. Microelectron. Lab., TRW Inc., Redondo Beach, CA, USA

Volume

3

Issue

12

fYear

1993

Firstpage

447

Lastpage

449

Abstract

We report the design and performance of state-of-the-art V-band MMIC LNA´s using 0.1- mu m gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMT´s. The three-stage V-band LNA demonstrated an average of 3.0 dB noise figure between 56-64 GHz with 24-25.5 dB associated gain with a noise figure of 2.7 dB measured at 62 GHz. Furthermore, the DC power dissipation of this circuit was only 19.5 mW which is less than one-third the DC power dissipation of InGaAs/AlGaAs/GaAs HEMT versions. These results demonstrate the excellent potential of InP HEMT technology for millimeter-wave and low DC power applications.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; semiconductor device noise; 0.1 micron; 19.5 mW; 2.7 dB; 24 to 25.5 dB; 3 dB; 56 to 64 GHz; DC power dissipation; EHF; In/sub 0.60/Ga/sub 0.40/As-In/sub 0.52/Al/sub 0.48/As-InP; InGaAs/InAlAs/InP HEMT technology; MIMIC; MM-wave IC; MMIC LNA; V-band; low DC power; millimeter-wave IC; pseudomorphic HEMT; three-stage type; Circuits; Gain measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Noise figure; Noise measurement; Power dissipation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.251393

Filename

251393