Title :
Observation of negative differential resistance in In0.53Ga0.47As/InP:Fe JFETs
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
A negative differential resistance (NDR) is observed in the drain-current/drain-source-voltage characteristic of In0.53-Ga0.47As/InP: Fe JFETs with gate lengths of 2 ¿m and 3 ¿m at small forward-biased gate-source voltages. This phenomenon is explained by the existence of a stationary Gunn domain in the channel at the drain side edge of the gate.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; junction gate field effect transistors; negative resistance; III-V semiconductors; In0.53Ga0.47As/InP:Fe; JFETs; drain-current/drain-source-voltage characteristic; forward-biased gate-source voltages; gate lengths; negative differential resistance; stationary Gunn domain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840632
