The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors

Classical semiconductor equations are based on the thermal equilibrium approximation. Limitations introduced by this approximation for the 2-D numerical modeling of n-channel silicon submicrometer MOS transistors are investigated. It is shown that the classical equations are accurate for predicting drain current for devices with effective channel lengths as small as 0.3 μm. However, accurate substrate current modeling requires a more detailed level of simulation even for devices with longer channel lengths. The solution of the energy conservation equation is discussed