Title :
An approximate-analytic solution for the forward-biased step junction
Author :
Schrimpf, R.D. ; Warner, R.M., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Approximate-analytic methods for analyzing semiconductor samples containing junctions complement purely numerical solutions by providing added physical insight. These methods have proved useful, but have been applicable primarily to samples at equilibrium. A technique for applying these methods to forward-biased junctions is described. The equations obtained are compatible with previously published work
Keywords :
electric potential; p-n junctions; semiconductor junctions; approximate-analytic solution; forward-biased step junction; numerical solutions; p-n junction; potential distribution; semiconductor junction; semiconductor samples; Charge carrier lifetime; Closed-form solution; Doping; Neodymium; Poisson equations;
Journal_Title :
Electron Devices, IEEE Transactions on
