• DocumentCode
    995534
  • Title

    An approximate-analytic solution for the forward-biased step junction

  • Author

    Schrimpf, R.D. ; Warner, R.M., Jr.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
  • Volume
    35
  • Issue
    5
  • fYear
    1988
  • fDate
    5/1/1988 12:00:00 AM
  • Firstpage
    698
  • Lastpage
    700
  • Abstract
    Approximate-analytic methods for analyzing semiconductor samples containing junctions complement purely numerical solutions by providing added physical insight. These methods have proved useful, but have been applicable primarily to samples at equilibrium. A technique for applying these methods to forward-biased junctions is described. The equations obtained are compatible with previously published work
  • Keywords
    electric potential; p-n junctions; semiconductor junctions; approximate-analytic solution; forward-biased step junction; numerical solutions; p-n junction; potential distribution; semiconductor junction; semiconductor samples; Charge carrier lifetime; Closed-form solution; Doping; Neodymium; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2515
  • Filename
    2515