DocumentCode
995544
Title
A new device-a power semiconductor diode with an integrated thermal sensor
Author
MÂnduteanu, George V.
Author_Institution
IPRS Baneasa, Bucharest, Romania
Volume
35
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
700
Lastpage
703
Abstract
A power semiconductor diode with an integrated thermal sensor is introduced. Means for producing such a device are presented, and the resulting device is analyzed. The theoretical model agrees with the experimental results within 10%. The practical conditions in which the sensor can be used are discussed
Keywords
electric sensing devices; semiconductor device models; semiconductor diodes; thermal variables measurement; TCR; electrical resistance; integrated thermal sensor; model; power semiconductor diode; Doping profiles; Electron devices; Neodymium; Regions; Semiconductor diodes; Semiconductor process modeling; Solid state circuits; Temperature sensors; Thermal sensors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2516
Filename
2516
Link To Document