Title :
A new device-a power semiconductor diode with an integrated thermal sensor
Author :
MÂnduteanu, George V.
Author_Institution :
IPRS Baneasa, Bucharest, Romania
fDate :
5/1/1988 12:00:00 AM
Abstract :
A power semiconductor diode with an integrated thermal sensor is introduced. Means for producing such a device are presented, and the resulting device is analyzed. The theoretical model agrees with the experimental results within 10%. The practical conditions in which the sensor can be used are discussed
Keywords :
electric sensing devices; semiconductor device models; semiconductor diodes; thermal variables measurement; TCR; electrical resistance; integrated thermal sensor; model; power semiconductor diode; Doping profiles; Electron devices; Neodymium; Regions; Semiconductor diodes; Semiconductor process modeling; Solid state circuits; Temperature sensors; Thermal sensors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
