Title :
Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser
Author :
Wada, O. ; Yamakoshi, S. ; Sanada, T. ; Fujii, T. ; Horimatsu, T. ; Sakurai, T.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor junction lasers; AlGaAs/GaAs; field-effect-transistor drivers; graded-index-waveguide separate-confinement-heterostructure; input gate voltage; laser threshold current; output light power; semi-insulating GaAs substrate; semiconductor junction lasers; sensitivity; single-quantum-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840636
