DocumentCode
995562
Title
Rabi oscillations for subpicosecond pulses in quantum-well optical amplifiers: interplay of carrier heating, nonlinear, and spectral effects
Author
Zhang, Jian-Zhong ; Galbraith, Ian
Author_Institution
Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK
Volume
41
Issue
8
fYear
2005
Firstpage
1083
Lastpage
1091
Abstract
Using the Foreman effective mass Hamiltonian for strained InxGa1-xAs--InyGa1-yAszP1-z quantum wells, the propagation of subpicosecond pulses in a 1.55-μm optical amplifier was calculated. The multisubband carrier dynamics as well as the polarization dynamics were taken into account. Carrier heating and coherent light-carrier interactions as well as the interplay of these nonlinear processes and the amplifier dispersion are studied. Strong Rabi oscillations occur in the optical field of a propagated pulse, its frequency chirp, as well as in the carrier density and temperature. While the Rabi oscillation imposes negative frequency chirp and hence red-shifts the pulse spectrum, positive frequency chirp can occur due to the local gain dispersion, where the higher frequency components of the pulse have larger gain. Due to the Rabi oscillation, the spectrum of the amplified pulse is considerably distorted and sidebands emerge. For a linearly chirped input pulse, the spectrum of the output pulse can be either red-shifted or blue-shifted with respect to its center frequency, depending on its initial chirp. For strong pulse propagation, a pronounced pulse break up occurs when a 175-fs pulse propagates in the gain regime, while a significant pulse compression occurs when the pulse propagates at the transparency point.
Keywords
III-V semiconductors; chirp modulation; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; light coherence; light polarisation; nonlinear optics; optical dispersion; optical pulse compression; quantum well lasers; red shift; semiconductor epitaxial layers; semiconductor optical amplifiers; transparency; 1.55 mum; 175 fs; Foreman effective mass Hamiltonian; InxGa1-xAsInyGa1-yAszP1-z; Rabi oscillations; amplifier dispersion; blue shift; carrier density; carrier heating; coherent light-carrier interactions; frequency chirp; gain regime; multisubband carrier dynamics; nonlinear effects; optical amplifiers; polarization dynamics; pulse propagation; quantum-well amplifiers; red shift; spectral effects; strained quantum wells; subpicosecond pulses; transparency point; Chirp; Frequency; Heating; Nonlinear optics; Optical amplifiers; Optical pulses; Pulse amplifiers; Quantum wells; Semiconductor optical amplifiers; Stimulated emission; Carrier heating; Rabi oscillation; pulse propagation; quantum well (QW); semiconductor optical amplifier (SOA);
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2005.850702
Filename
1463272
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