• DocumentCode
    995582
  • Title

    Low-resistance submicrometre gates used for self alignment

  • Author

    Ismail, K. ; Beneking, H.

  • Author_Institution
    Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    20
  • Issue
    22
  • fYear
    1984
  • Firstpage
    942
  • Lastpage
    943
  • Abstract
    A novel gate fabrication technique useful for MESFETs is presented. The gates have submicrometre dimensions with an extremely low ohmic resistance and are used for self alignment. Simple optical projection lithography and electroplating techniques are needed. The resulting gates have proved to be mechanically strong.
  • Keywords
    Schottky gate field effect transistors; electroplating; photolithography; MESFETs; electroplating techniques; gate fabrication technique; ohmic resistance; optical projection lithography; self alignment; submicrometre dimensions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840640
  • Filename
    4249152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995582