Title :
Low-resistance submicrometre gates used for self alignment
Author :
Ismail, K. ; Beneking, H.
Author_Institution :
Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
A novel gate fabrication technique useful for MESFETs is presented. The gates have submicrometre dimensions with an extremely low ohmic resistance and are used for self alignment. Simple optical projection lithography and electroplating techniques are needed. The resulting gates have proved to be mechanically strong.
Keywords :
Schottky gate field effect transistors; electroplating; photolithography; MESFETs; electroplating techniques; gate fabrication technique; ohmic resistance; optical projection lithography; self alignment; submicrometre dimensions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840640
