Title :
Gallium arsenide photo-MESFET´s
Author :
Lakshmi, B. ; Chalapati, K. ; Srivastava, A.K. ; Arora, B.M. ; Subramanian, S. ; Sharma, D.K.
Author_Institution :
SAMEER, Indian Inst. of Technol., Bombay, India
fDate :
6/1/1990 12:00:00 AM
Abstract :
Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subthreshold mode with subband-gap photon energy illumination. In the second mode, the transistor operates by internal photoemission from the metal gate to the semiconductor. In the normal mode, the square root of the drain photocurrent varies as the logarithm of the incident light intensity. The device characteristics for subband-gap illumination have been analyzed, and it is shown that the photocurrent varies linearly with light intensity in this mode
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; phototransistors; drain photocurrent; internal photoemission; linear photocurrent; linear response; logarithmic response; normal mode; photocurrent proportional to light intensity; response measurements; semiconductors; subband-gap photon energy illumination; subthreshold mode; Energy measurement; FETs; Gallium arsenide; Lighting; MESFETs; Optical modulation; Optical pulses; Photoconductivity; Photoelectricity; Photonic band gap;
Journal_Title :
Electron Devices, IEEE Transactions on
