• DocumentCode
    995676
  • Title

    InSb MOS structures fabricated by a novel thermal oxidation method

  • Author

    Takagi, Yutaka ; Sugiura, O. ; Takahashi, Tatsuro ; Naruke, Y. ; Matsumura, Mieko

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    20
  • Issue
    23
  • fYear
    1984
  • Firstpage
    954
  • Lastpage
    955
  • Abstract
    Interfaces between InSb and its native oxide grown by a novel thermal oxidation method have been clarified to have good electrical characteristics. The interface state density was of a V-shaped form with the minimum value of less than 1012/cm2 eV, and the field-effect mobility of the holes at 77 K was about 300 cm2/Vs.
  • Keywords
    III-V semiconductors; carrier mobility; indium antimonide; interface electron states; metal-insulator-semiconductor structures; oxidation; III-V semiconductor; InSb MOS structures; InSb/oxide interface; electrical characteristics; field effect hole mobility; interface state density; thermal oxidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840649
  • Filename
    4249162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995676