DocumentCode
995690
Title
InGaAs/InP heterobipolar transistors for integration on semi-insulating InP substrates
Author
D¿¿mbkes, H. ; K¿¿nig, U. ; Schwaderer, B.
Author_Institution
AEG-Telefunken, Forschungsinstitut, Ulm, West Germany
Volume
20
Issue
23
fYear
1984
Firstpage
955
Lastpage
957
Abstract
InGaAs/InP npn heterojunction bipolar transistors (HBTs) have been fabricated from LPE layers grown on semi-insulating InP substrates for application to integrated circuits. The inverted emitter configuration is used, which allows the growth of the active layers without any additional steps. The HBTs show stable characteristics without any hysteresis and with current gains up to 25 for 0.7 ¿m base width. To our knowledge this is the first report of InGaAs/InP HBTs on a semi-insulating substrate.
Keywords
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; III-V semiconductor; InGaAs/InP heterobipolar transistors; LPE layers; active layers; current gains; heterojunction bipolar transistors; integrated circuits; integration; inverted emitter configuration; semiinsulating InP substrate; stable characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840650
Filename
4249163
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