• DocumentCode
    995728
  • Title

    On the calculation of specific contact resistivity on ⟨100⟩ Si

  • Author

    Ng, Kwok K. ; Liu, Ruichen

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    37
  • Issue
    6
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    1535
  • Lastpage
    1537
  • Abstract
    In order to design submicrometer Si MOSFETs properly, the specific contact resistivity ρc has to be controlled. The ρ c is known to be a function of both the barrier height and the Si surface doping concentration. An existing theory is used to generate ρc, emphasizing details in the practical regimes, with a careful choice of proper parameters such as the tunneling effective mass, which is a function of both temperature and doping concentration
  • Keywords
    elemental semiconductors; insulated gate field effect transistors; semiconductor-metal boundaries; silicon; ⟨100⟩ Si; Si; barrier height; calculation of specific contact resistivity; practical regimes; semiconductors; submicrometer Si MOSFETs; surface doping concentration; tunneling effective mass; Conductivity; Doping; Gallium arsenide; Lighting; MESFETs; Photoelectricity; Photonic band gap; Schottky barriers; Silicides; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.106252
  • Filename
    106252
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=995728