• DocumentCode
    995750
  • Title

    Reply: Near room temperature 1.3 μm single photon counting with an InGaAs avalanche photodiode

  • Author

    Levine, B.F.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    20
  • Issue
    23
  • fYear
    1984
  • Firstpage
    962
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; 1.3 microns; InGaAs avalanche photodiode; InGaAs/InP SAGM APD; breakdown pulse probability; breakdown voltage; dark carriers; room temperature; single photon counting; trapped carriers; undepleted drift region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840655
  • Filename
    4249168