DocumentCode
995750
Title
Reply: Near room temperature 1.3 μm single photon counting with an InGaAs avalanche photodiode
Author
Levine, B.F.
Author_Institution
AT&T Bell Laboratories, Murray Hill, USA
Volume
20
Issue
23
fYear
1984
Firstpage
962
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photon counting; 1.3 microns; InGaAs avalanche photodiode; InGaAs/InP SAGM APD; breakdown pulse probability; breakdown voltage; dark carriers; room temperature; single photon counting; trapped carriers; undepleted drift region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840655
Filename
4249168
Link To Document