Title :
Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices
Author :
Adell, Philippe C. ; Barnaby, Hugh J. ; Schrimpf, Ron D. ; Vermeire, Bert
Author_Institution :
Jet Propulsion Lab., Pasadena
Abstract :
We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined.
Keywords :
leakage currents; radiation effects; silicon-on-insulator; band-to-band tunneling; charge buildup; impact ionization; irradiated fully-depleted SOI devices; leakage current; Degradation; Helium; Impact ionization; Insulation; Laboratories; Leakage current; MOS devices; MOSFETs; Propulsion; Tunneling; Band-to-band tunneling; GIDL; fully depleted SOI; high current regime; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.911419
