Title :
Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs Using Mono-Energetic Neutron Sources
Author :
Baggio, J. ; Lambert, D. ; Ferlet-Cavrois, V. ; Paillet, P. ; Marcandella, C. ; Duhamel, O.
Author_Institution :
CEA/DIF, Bruyeres-le-Chatel
Abstract :
The neutron-induced SEU sensitivity in the 1-10 MeV energy range is investigated using monoenergetic neutron beams at 2.5, 4, 6, and 14 MeV. Below the 0.25 mum technology node, bulk technologies exhibit a relatively high sensitivity to neutrons between 4 and 6 MeV which is explained by the contribution of alpha particles coming from (n, alpha) reactions. In the terrestrial environment, the contribution to SER of neutrons in this energy range exceeds 10%.
Keywords :
SRAM chips; neutron effects; (n,alpha) reactions; alpha particles; electron volt energy 1 MeV to 10 MeV; electron volt energy 14 MeV; monoenergetic neutron beams; single event upsets; static-RAMs; terrestrial environment; Aerospace electronics; Alpha particles; Boron; Cosmic rays; Neutrons; Nuclear electronics; Particle beams; Protons; Random access memory; Single event upset; Neutron; SEU; SOI; SRAM;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910039
