Title :
New approach to growth of abrupt heterojunctions by MOVPE
Author :
Moss, R.H. ; Spurdens, P.C.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
A new approach to the growth of abrupt heterojunctions by MOVPE in which the substrate is moved from one gas stream to another is reported. The technique has been demonstrated by successfully growing both single thick layers and multi-quantum-well layers of GaInAs and InP. The structures were grown at one atmosphere using preformed adducts and the material was assessed using double crystal X-ray diffraction, transmission electron microscopy (TEM) and photoluminescence (PL) techniques and found to be of high quality.
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; vapour phase epitaxial growth; GaInAs; GaInAs/InP superlattice; III-V semiconductors; InP; MOVPE; TEM; abrupt heterojunctions; double crystal X-ray diffraction; multiquantum well layers; photoluminescence; preformed adducts; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840666
