DocumentCode
995944
Title
Current dependence of the emitter resistance of bipolar transistors
Author
Park, Ju-Sung ; Neugroschel, Arnost
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
37
Issue
6
fYear
1990
fDate
6/1/1990 12:00:00 AM
Firstpage
1540
Lastpage
1542
Abstract
An analysis of the current dependence is performed using a partitioned transistor equivalent circuit that includes the distributed effects of the emitter contact. It is shown that the emitter resistance increases with current if emitter current crowding is important. The current dependence of the emitter resistance is extracted as a function of the specific contact resistance and the base and emitter sheet resistances
Keywords
bipolar transistors; equivalent circuits; semiconductor device models; base sheet resistance; bipolar transistors; current dependence; distributed effects; emitter current crowding; emitter resistance; emitter sheet resistances; partitioned transistor equivalent circuit; specific contact resistance; Art; Bipolar transistors; Contact resistance; Equivalent circuits; Geometry; Proximity effect; Semiconductor devices; Steady-state; Transmission lines; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.106254
Filename
106254
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