Title :
Current dependence of the emitter resistance of bipolar transistors
Author :
Park, Ju-Sung ; Neugroschel, Arnost
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
An analysis of the current dependence is performed using a partitioned transistor equivalent circuit that includes the distributed effects of the emitter contact. It is shown that the emitter resistance increases with current if emitter current crowding is important. The current dependence of the emitter resistance is extracted as a function of the specific contact resistance and the base and emitter sheet resistances
Keywords :
bipolar transistors; equivalent circuits; semiconductor device models; base sheet resistance; bipolar transistors; current dependence; distributed effects; emitter current crowding; emitter resistance; emitter sheet resistances; partitioned transistor equivalent circuit; specific contact resistance; Art; Bipolar transistors; Contact resistance; Equivalent circuits; Geometry; Proximity effect; Semiconductor devices; Steady-state; Transmission lines; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
