Title :
Piezoresistance in polysilicon
Author :
French, P.J. ; Evans, A.G.R.
Author_Institution :
University of Southampton, Department of Electronics & Information Engineering, Southampton, UK
Abstract :
A theoretical model for piezoresistance in polysilicon is described. Grain size, orientation and doping dependence effects are included. Predictions of gauge factor using the model give reasonable agreement with experimental results and enable optimum processing parameters to be chosen for a given grain size.
Keywords :
elemental semiconductors; piezoresistance; silicon; doping dependence effects; gauge factor; grain size; optimum processing parameters; piezoresistance; polycrystalline Si; theoretical model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840680
