Title :
1.5 μm monolithic shallow-groove coupled-cavity vapour phase transported buried heterostructure lasers
Author :
Koch, T.L. ; Coldren, L.A. ; Bridges, T.J. ; Burkhardt, E.G. ; Corvini, P.J. ; Wilt, D.P.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
We demonstrate a new low-threshold 1.5 μm single-wavelength InGaAsP laser. Frequency selectivity is achieved by a simple photolithographically defined groove discontinuity involving no additional processing. Side mode suppressions as high as 26 dB have been achieved with typical thresholds of 35 mA.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.5 microns wavelength; III-V semiconductors; buried heterostructure lasers; photolithographically defined groove discontinuity; side mode suppressions; single-wavelength InGaAsP laser; thresholds;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840681
