Title :
Laser SEE Sensitivity Mapping of SRAM Cells
Author :
Chugg, A.M. ; Burnell, A.J. ; Moutrie, M.J. ; Jones, R. ; Harboe-Sorensen, R.
Author_Institution :
MBDA UK Ltd., Bristol
Abstract :
It is shown that laser sensitivity mapping at the cell level can be used to reconstruct and analyze the SEE cross-section. It resolves such conundrums as data pattern variations in the SEE sensitivity of memories. The pattern of SEE sensitivity revealed by the laser maps is shown to be reflected in features of ion beam test data.
Keywords :
SRAM chips; ion beam applications; laser beam applications; laser beam effects; SEE cross-section; SRAM cells; data pattern variations; ion beam test data; laser SEE sensitivity mapping; laser maps; memories; multiple bit upset; single event effects; static random access memory cells; Ion beams; Laser applications; Laser beams; Optical arrays; Optical pulses; Pulsed laser deposition; Radiation effects; Random access memory; SRAM chips; Testing; Ion beam applications; SRAM chips; laser radiation effects; multiple bit upset (MBU); single event effects (SEE);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.909514
