Title :
Fabrication of submicrometre resist patterns using an edge-defined technique
Author :
Takasu, Y. ; Todokoro, Y.
Author_Institution :
Matsushita Electronics Corporation, Semiconductor R&D Center, Nagaokakyo, Japan
Abstract :
An edge-defined technique for the fabrication of submicrometre resist patterns is described. The technique consists of resist pattern fabrication, deep UV hardening, plasma deposition, spin coating of resist, developing back, and wet etch. A 100 nm line in 1.2 ¿m-thick resist layer is obtained with essentially vertical walls.
Keywords :
etching; photoresists; plasma deposition; deep UV hardening; edge-defined technique; plasma deposition; resist pattern fabrication; spin coating; submicrometre resist patterns; wet etch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840689
