Title :
Dielectric isolation by orientation-dependent etching
Author :
Nicholas, K.H. ; Stemp, I.J. ; Brockman, H.E.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
A dielectric isolation technology is described that is suitable for use in integrated circuits and particularly for latch-up suppression in CMOS. The silicon islands maintain the original crystal surface and no damaging implants are involved. The technique uses anisotropic and orientation-dependent etching followed by planarisation.
Keywords :
CMOS integrated circuits; etching; integrated circuit technology; CMOS; Si islands; dielectric isolation technology; latch-up suppression; orientation-dependent etching; planarisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840690
