Title :
Circuit models for three-dimensional geometries including dielectrics
Author :
Ruehli, Albert E. ; Heeb, Hansruedi
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
The partial element equivalent circuit (PEEC) approach has proved useful for modeling many different electromagnetic problems. The technique can be viewed as an approach for the electrical circuit modeling for arbitrary 3-D geometries. Recently, the authors extended the method to include retardation with the rPEEC models. So far the dielectrics have been taken into account only in an approximate way. In this work, they generalize the technique to include arbitrary homogeneous dielectric regions. The new circuit models are applied in the frequency as well as the time domain. The time solution allows the modeling of VLSI systems which involve interconnects as well as nonlinear transistor circuits
Keywords :
VLSI; equivalent circuits; frequency-domain analysis; integral equations; semiconductor device models; time-domain analysis; VLSI systems; electrical circuit modeling; frequency-domain; interconnects; nonlinear transistor circuits; partial element equivalent circuit; rPEEC models; three-dimensional geometries; time domain; Coupling circuits; Dielectrics; Electromagnetic modeling; Frequency; Geometry; Integrated circuit interconnections; Solid modeling; Transmission line theory; Very large scale integration; Wires;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on