New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

Author

Ferlet-Cavrois, V. ; Paillet, P. ; McMorrow, D. ; Fel, N. ; Baggio, J. ; Girard, S. ; Duhamel, O. ; Melinger, J.S. ; Gaillardin, M. ; Schwank, J.R. ; Dodd, P.E. ; Shaneyfelt, M.R. ; Felix, J.A.

Author_Institution

CEA/DIF, Bruyeres-le-Chatel

Volume

54

Issue

6

fYear

2007

Firstpage

2338

Lastpage

2346

Abstract

The generation and propagation of single event transients (SET) is measured and modeled in SOI inverter chains with different designs. SET propagation in inverter chains induces significant modifications of the transient width. In some cases, a "propagation-induced pulse broadening" (PIPB) effect is observed. Initially narrow transients, less than 200 ps at the struck node, are progressively broadened up to the nanosecond range, with the degree of broadening dependent on the transistor design and the length of propagation. The chain design (transistor size and load) is shown to have a major impact on the transient width modification.

Keywords

invertors; silicon-on-insulator; transients; transistors; SOI inverter chains; chain design; nanosecond range; propagation-induced pulse broadening; single event transient propagation; struck node; transient width modification; transistor design; Circuits; Laboratories; Optical propagation; Optical pulses; Pulse generation; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Space vector pulse width modulation; Voltage; Chains of inverters; SET propagation; SET width; digital single event transients; heavy ion and pulsed laser irradiation; propagation-induced pulse broadening (PIPB) effect;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.910202

Filename

4395021