Title :
Mapping of Single Event Burnout in Power MOSFETs
Author :
Haran, Avner ; Barak, Joseph ; David, David ; Refaeli, Nati ; Fischer, Bernd E. ; Voss, Kay-Obbe ; Du, Guanghua ; Heiss, Markus
Author_Institution :
Soreq NRC, Yavne
Abstract :
Direct heavy ion mapping of single-event burnout (SEB) in power MOSFETs is presented for the first time utilizing the GSI microprobe with Xe and Ar ion beams. The mapping results indicate that the source and the channel of the power MOSFET are the most sensitive areas to SEB. Correlation to charge collection mapping, as well as the difference between the mapping results of the two ion beams are discussed.
Keywords :
ion beam effects; power MOSFET; GSI microprobe; charge collection mapping; direct heavy ion mapping; ion beams; power MOSFET; single event burnout; Argon; Electric breakdown; Ion beams; MOSFETs; Rectifiers; Shape; Single event upset; Space missions; Testing; Voltage; Alpha particles; HEXFET; heavy ion mapping; microbeam; power MOSFET; single event burnout (SEB); single event gate rupture (SEGR);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910851
