Author :
Harboe-Sorensen, R. ; Guerre, F.-X. ; Lewis, G.
Abstract :
In order to investigate heavy ion single event effects (SEEs) in advanced commercial DDR-II SDRAM memories, a large number of practical problems need to be addressed ranging from test approach, sample preparation, error analysis, physical error identifications and effective LET corrections before test results can be presented. This paper continues where Harboe-Soslashrensen et al. , 2003, ended with further details on most of the critical steps mentioned above. Additionally, the first set of SEE data will be presented and discussed covering Samsung, Infineon, Micron, and Elpida 512 M-bit DDR-II memory devices.
Keywords :
DRAM chips; ion beam effects; semiconductor device testing; DDR-II SDRAM memories; Elpida; Infineon; LET corrections; Micron; SEE test concept; SEFI; Samsung; back side irradiation; heavy ion irradiation; heavy ion single event effects; single event effect testing; single event upset; stopping power; test analysis; test facilities; thinned devices; DRAM chips; Error analysis; Error correction; Packaging; SDRAM; Single event upset; Solid state circuits; Test facilities; Testing; Thickness measurement; DDR; DDR-II memories; LET corrections; SDRAM; SEE test concept; SEFI; heavy ion irradiation; irradiated from the back side; single event effect testing; single event upset; stopping power; test analysis; test facilities; thinned devices;
