Title :
Single Event Effect Characterization of High Density Commercial NAND and NOR Nonvolatile Flash Memories
Author :
Irom, Farokh ; Nguyen, Duc N.
Author_Institution :
California Inst. of Technol., Pasadena
Abstract :
Heavy ion single-event measurements on a variety of high density commercial NAND and NOR flash memories were reported. Three SEE phenomena were investigated: SEUs, SEFIs, and catastrophic loss of ability to erase and write to the device. Although for all devices under test SEUs and SEFIs were observed, these commercial high densities devices appear to be much less susceptible than typical flash devices that have been tested lately. A new high current phenomenon in the high density NAND flash memories and charge pump failure in the NOR flash memory are discussed.
Keywords :
NAND circuits; NOR circuits; flash memories; charge pump failure; heavy ion single-event measurements; high density commercial NAND flash memories; high density commercial NOR flash memories; single event effect characterization; Charge pumps; Circuits; Density measurement; Flash memory; Nonvolatile memory; Propulsion; Single event transient; Single event upset; Space technology; Testing; Catastrophic; destructive; dielectric gate rupture; micro-dose; nonvolatile memory;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.909984