Title :
Reduced indium incorporation during the MBE growth of In(Al,Ga)As
Author :
McElhinney, M. ; Stanley, C.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
7/8/1993 12:00:00 AM
Abstract :
A reduction in indium incorporation during the MBE growth of In(Al,Ga)As at moderate temperatures has been observed by RHEED oscillations and confirmed by X-ray diffractometry. The cause is believed to be surface segregation which can result in an under-estimate of the indium flux calculated from InAs RHEED oscillations, and the growth under non-optimum conditions of In-deficient In(Al,Ga)As with poor morphology.
Keywords :
III-V semiconductors; X-ray diffraction examination of materials; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface segregation; In incorporation reduction; InAlGaAs; MBE growth; RHEED oscillations; X-ray diffractometry; semiconductors; surface segregation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930869
