The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

Author

Laird, Jamie S. ; Onoda, Shinobu ; Hirao, Toshio ; Edmonds, Larry ; Ohshima, Takeshi

Author_Institution

California Inst. of Technol., Pasadena

Volume

54

Issue

6

fYear

2007

Firstpage

2384

Lastpage

2393

Abstract

The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p⁺-n-n⁺ sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p⁺-n-n⁺ device where space charge screening effects (SCSE) result in transient shape being dependent on ion track structure. The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; high-speed optical techniques; ion beam effects; laser beam effects; photodetectors; silicon; space-charge limited devices; Edmonds charge collection model; GaAs; III-V optoelectronic sensors; Si; high-energy heavy ion microbeams; high-injection carrier dynamics; high-speed Si p⁺-n-n⁺ optoelectronic sensors; ion track structure; laser microbeams; photodetectors; picosecond laser; space charge screening effects; transient current; Gallium arsenide; III-V semiconductor materials; Laser modes; Optoelectronic and photonic sensors; Photodetectors; Plasma density; Plasma devices; Plasma displays; Plasma properties; Shape; GaAs; III-V; Si; heavy ion; high frequency; high-injection effects; ion track structure; optoelectronics; picosecond laser; space-charge screening; transient current; ultrafast;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.911421

Filename

4395052