DocumentCode :
996663
Title :
Analysis of threshold current density of CdZnSe/ZnSSe strained well lasers
Author :
Kuramoto, Masafumi ; Chong, T.C. ; Kikuchi, A. ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. Electron. Eng., Sophia Univ., Tokyo, Japan
Volume :
29
Issue :
14
fYear :
1993
fDate :
7/8/1993 12:00:00 AM
Firstpage :
1260
Lastpage :
1262
Abstract :
The threshold current density (Jth) of blue-green CdZnSe/ZnSSe strained quantum well lasers is analysed using the laser theory established for III-V semiconductor lasers. Very good agreement between theory and the reported experimental Jth values is obtained over a wide temperature range from 77 to 273 K. The optimal Cd composition of a CdZnSe single quantum well active layer for obtaining a low Jth value at room temperature is in the range 0.25-0.30.
Keywords :
II-VI semiconductors; cadmium compounds; laser theory; semiconductor lasers; sulphur compounds; zinc compounds; 77 to 273 K; CdZnSe-ZnSSe; blue-green laser; laser theory; optimal Cd composition; quantum well; strained well lasers; threshold current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930842
Filename :
252418
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=996663
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