• DocumentCode
    996667
  • Title

    K-band f.e.t. amplifiers

  • Author

    Nowak, M.M. ; Terzian, P.A. ; Fairman, R.D.

  • Author_Institution
    Varian Associates, Palo Alto, USA
  • Volume
    13
  • Issue
    6
  • fYear
    1977
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    Single-stage f.e.t. amplifiers operating in K-band have been constructed using the Varian VSX 9305 0.5 ¿m-gate GaAs f.e.t. An amplifier gain of 9±1 dB was obtained over the frequency band 18.5¿20.5 GHz and gain of 8±1 dB was observed from 23.0 to 26.0 GHz. An amplifier noise figure of 5.6 dB was measured at 24 GHz.
  • Keywords
    Schottky gate field effect transistors; field effect transistor circuits; microwave amplifiers; solid-state microwave circuits; 18.5 to 20.5 GHz; 23 to 26 GHz; 24 GHz; GaAs FET; K-band FET amplifier; amplifier gain; amplifier noise figure; microwave amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770113
  • Filename
    4249258