Title :
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies
Author :
Narasimham, Balaji ; Bhuva, Bharat L. ; Schrimpf, Ronald D. ; Massengill, Lloyd W. ; Gadlage, Matthew J. ; Amusan, Oluwole A. ; Holman, William Timothy ; Witulski, Arthur F. ; Robinson, William H. ; Black, Jeffrey D. ; Benedetto, Joseph M. ; Eaton, Paul H
Author_Institution :
Vanderbilt Univ., Nashville, TN
Abstract :
The distributions of SET pulse-widths produced by heavy ions in 130-nm and 90-nm CMOS technologies are measured experimentally using an autonomous pulse characterization technique. The event cross section is the highest for SET pulses between 400 ps to 700 ps in the 130-nm process, while it is dominated by SET pulses in the range of 500 ps to 900 ps in the 90-nm process. The increasing probability of longer SET pulses with scaling is a key factor determining combinational logic soft errors in advanced technologies. Mixed mode 3D-TCAD simulations demonstrate that the variation of pulse-width results from the variation in strike location.
Keywords :
CMOS integrated circuits; combinational circuits; transients; 3D-TCAD simulations; CMOS technologies; SET; combinational logic soft errors; digital single event transient pulse-widths; integrated circuit technologies; size 130 nm; size 90 nm; CMOS technology; Integrated circuit technology; Logic; Microelectronics; Pulse circuits; Pulse measurements; Single event upset; Space technology; Space vector pulse width modulation; Voltage; CMOS; DSET; SET; SEU; combinational logic; pulse-width; single event; single event transient; soft error;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910125
