Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode

Author

Onoda, Shinobu ; Ohshima, Takeshi ; Hirao, Toshio ; Mishima, Kenta ; Hishiki, Shigeomi ; Iwamoto, Naoya ; Kojima, Kazuhisa ; Kawano, Katsuyasu

Author_Institution

Japan Atomic Energy Agency, Gunma

Volume

54

Issue

6

fYear

2007

Firstpage

1953

Lastpage

1960

Abstract

Charge collection efficiency (CCE) of 6H-SiC diodes was evaluated before and after gamma irradiation using a Co-60 source. After gamma irradiation of 96 Mrad(SiC), CCE at a bias of 150 V decreased from 95% to 70%. The degradation of diffusion length of minority carriers was evaluated from the change in the applied bias dependence of CCE due to gamma irradiation. We also discuss whether non-ionizing energy loss (NIEL) analysis can be applied to evaluate the diffusion length degradation of 6H-SiC as well as the carrier removal rate.

Keywords

gamma-ray effects; minority carriers; semiconductor diodes; silicon compounds; wide band gap semiconductors; NIEL; SiC; charge collection efficiency; diffusion; gamma irradiation; junction diodes; minority carriers; nonionizing energy loss analysis; voltage 150 V; Degradation; Energy loss; Gamma rays; Ion beams; Large Hadron Collider; Performance analysis; Radiation detectors; Schottky diodes; Silicon carbide; Silicon radiation detectors; 6H-SiC junction diode; CCE; Carrier removal rate; TIBIC system; diffusion length;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.910203

Filename

4395067