مرکز منطقه ای اطلاع رساني علوم و فناوري - p-type InP grown at low temperatures by atomic layer molecular beam epitaxy (ALMBE)

DocumentCode :

996734

Title :

p-type InP grown at low temperatures by atomic layer molecular beam epitaxy (ALMBE)

Author :

Dotor, M.L. ; Huertas, P. ; Postigo, P.A. ; Golmayo, D. ; Briones, F.

Author_Institution :

Centro Nacional de Microelectron., Madrid, Spain

Volume :

Issue :

fYear :

1993

fDate :

7/8/1993 12:00:00 AM

Firstpage :

1270

Lastpage :

1271

Abstract :

Residual doping of InP layers grown at low temperature by atomic layer molecular beam epitaxy (ALMBE) has been reduced down to approximately 10¹⁶ cm^-3 by control of phosphorus pulses, and then, p-type InP layers doped with Be have been grown at substrate temperatures of 305-340 degrees C. Epilayers show low compensation and mobilities that are comparable to bulk p-type InP.

Keywords :

III-V semiconductors; atomic layer epitaxial growth; beryllium; carrier density; carrier mobility; electrical conductivity of crystalline semiconductors and insulators; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; 305 to 340 degC; ALMBE; InP:Be; RHEED; atomic layer MBE; low temperature growth; mobilities; molecular beam epitaxy; p-type; semiconductor; substrate temperatures;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19930848

Filename :

252424

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=996734